RBN40N65T1UFWA IGBT

Renesas

Description

RBN40N65T1UFWA 650V - 40A - IGBT .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and app.

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Datasheet Specifications

Part number: RBN40N65T1UFWA
Manufacturer: Renesas ↗
File Size: 138.75 KB
Datasheet: RBN40N65T1UFWA-Renesas.pdf
Description: IGBT

Features

* Renesas generation 8th Trench IGBT
* Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25 C)
* High speed switching

Applications

* UPS, Welding, photovoltaic inverters, Power converter system
* Unsawn wafer Wafer size: 200 mm
* Quality grade: Standard Datasheet R07DS1496EJ0120 Rev.1.20 Oct.18th.2024 Key performance Product name RBN40N65T1UFWA VCES 650 V IC 40 A Die size 13.69 mm2 (3.70 mm x 3.70 mm) Package Unsaw

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