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R1Q2A7218ABB - 72-Mbit QDRII SRAM

Download the R1Q2A7218ABB datasheet PDF (R1Q2A7236ABB included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for 72-mbit qdrii sram.

Description

The R1Q2A7236 is a 2,097,152-word by 36-bit, the R1Q2A7218 is a 4,194,304-word by 18-bit, and the R1Q2A7209 is a 8,388,608-word by 9-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.

Features

  • Power Supply.
  • 1.8 V for core (VDD), 1.4 V to VDD for I/O (VDDQ) Clock.
  • Fast clock cycle time for high bandwidth.
  • Two input clocks (K and /K) for precise DDR timing at clock rising edges only.
  • Two input clocks for output data (C and /C) to minimize clock skew and flight time mismatches.
  • Two output echo clocks (CQ and /CQ) simplify data capture in high-speed systems.
  • Clock-stop capability with s restart I/O.
  • Separate independent read.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (R1Q2A7236ABB-Renesas.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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R1Q2A7236ABB R1Q2A7218ABB R1Q2A7209ABB Data Sheet 72-Mbit QDR™II SRAM 2-word Burst R10DS0164EJ0203 Rev. 2.03 Feb 01, 2019 Description The R1Q2A7236 is a 2,097,152-word by 36-bit, the R1Q2A7218 is a 4,194,304-word by 18-bit, and the R1Q2A7209 is a 8,388,608-word by 9-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, high speed, low voltage, high density and wide bit configuration. These products are packaged in 165-pin plastic FBGA package.
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