R1QBA3636CBG - 36-Mbit DDRII+ SRAM

Description

The R1Q#A3636 is a 1,048,576-word by 36-bit and the R1Q#A3618 is a 2,097,152-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.

It integrates unique synchronous peripheral circuitry and a burst counter.

Features

႑ Power Supply.
1.8 V for core (VDD), 1.4 V to VDD for I/O (VDDQ) ႑ Clock.
Fast clock cycle time for high bandwidth.
Two input clocks (K and /K) for precise DDR timing at clock rising edges only.
Two output echo clocks (CQ and /CQ) simplify data capture in high-speed systems.
Clock-stop capability with Ps restart ႑ I/O.
Common data input/output bus.
Pipelined double data rate operation.
HSTL I/O.
User programmable o.

Renesas

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Datasheet Details

Part number	R1QBA3636CBG
Manufacturer	Renesas
File Size	303.83 KB
Description	36-Mbit DDRII+ SRAM
Datasheet	R1QBA3636CBG Datasheet
Additional preview pages of the R1QBA3636CBG datasheet.

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Full PDF Text Transcription

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R1QBA36**CB* / R1QEA36**CB* Series R1QBA3636CBG / R1QBA3618CBG / R1QBA3609CBG R1QEA3636CBG / R1QEA3618CBG / R1QEA3609CBG R1QHA3636CBG / R1QHA3618CBG / R1QHA3609CBG R1QLA3636CBG / R1QLA3618CBG / R1QLA3609CBG 36-Mbit DDRII+ SRAM 2-word Burst R10DS0159EJ0009 Rev. 0.09a 2011.09.14 Description The R1Q#A3636 is a 1,048,576-word by 36-bit and the R1Q#A3618 is a 2,097,152-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K.

Published: May 8, 2020 |