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R1EV58256BSCN - 256K EEPROM

Download the R1EV58256BSCN datasheet PDF (R1EV58256BDAN included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for 256k eeprom.

Description

Renesas Electronics’ R1EV58256BxxN series and R1EV58256BxxR series are electrically erasable and programmable EEPROM’s organized as 32768-word  8-bit.

Features

  • Single supply: 2.7 to 5.5 V.
  • Access time:  85 ns (max)/100 ns (max) at 4.5 V  VCC < 5.5 V  120 ns (max) at 2.7 V  VCC  5.5 V.
  • Power dissipation:  Active: 20 mW/MHz (typ)  Standby: 110 W (max).
  • On-chip latches: address, data, CE, OE, WE.
  • Automatic byte write: 10 ms (max).
  • Automatic page write (64 bytes): 10 ms (max).
  • Ready/Busy (only the R1EV58256BxxR series).
  • Data polling and Toggle bit.
  • Data protection circuit on power on/off.
  • Conforms.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (R1EV58256BDAN-Renesas.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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R1EV58256BxxN Series R1EV58256BxxR Series 256K EEPROM (32-Kword × 8-bit) Ready/Busy and RES function (R1EV58256BxxR) Data Sheet R10DS0208EJ0201 Rev.2.01 Apr. 01, 2020 Description Renesas Electronics’ R1EV58256BxxN series and R1EV58256BxxR series are electrically erasable and programmable EEPROM’s organized as 32768-word  8-bit. They have realized high speed, low power consumption and high reliability by employing advanced MONOS memory technology and CMOS process and circuitry technology. They also have a 64-byte page programming function to make their write operations faster. Features  Single supply: 2.7 to 5.5 V  Access time:  85 ns (max)/100 ns (max) at 4.5 V  VCC < 5.5 V  120 ns (max) at 2.7 V  VCC  5.
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