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R1EV58256BTDR - 256K EEPROM

Download the R1EV58256BTDR datasheet PDF. This datasheet also covers the R1EV58256BDAN variant, as both devices belong to the same 256k eeprom family and are provided as variant models within a single manufacturer datasheet.

Description

Renesas Electronics’ R1EV58256BxxN series and R1EV58256BxxR series are electrically erasable and programmable EEPROM’s organized as 32768-word  8-bit.

Features

  • Single supply: 2.7 to 5.5 V.
  • Access time:  85 ns (max)/100 ns (max) at 4.5 V  VCC < 5.5 V  120 ns (max) at 2.7 V  VCC  5.5 V.
  • Power dissipation:  Active: 20 mW/MHz (typ)  Standby: 110 W (max).
  • On-chip latches: address, data, CE, OE, WE.
  • Automatic byte write: 10 ms (max).
  • Automatic page write (64 bytes): 10 ms (max).
  • Ready/Busy (only the R1EV58256BxxR series).
  • Data polling and Toggle bit.
  • Data protection circuit on power on/off.
  • Conforms.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (R1EV58256BDAN-Renesas.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Renesas

Part Number Description
R1EV58256BTCN 256K EEPROM
R1EV58256BDAN 256K EEPROM
R1EV58256BSCN 256K EEPROM
R1EX24004ASAS0G I2C-bus EEPROM
R1EX24004ATAS0G I2C-bus EEPROM

Full PDF Text Transcription

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R1EV58256BxxN Series R1EV58256BxxR Series 256K EEPROM (32-Kword × 8-bit) Ready/Busy and RES function (R1EV58256BxxR) Data Sheet R10DS0208EJ0201 Rev.2.01 Apr. 01, 2020 Description Renesas Electronics’ R1EV58256BxxN series and R1EV58256BxxR series are electrically erasable and programmable EEPROM’s organized as 32768-word  8-bit. They have realized high speed, low power consumption and high reliability by employing advanced MONOS memory technology and CMOS process and circuitry technology. They also have a 64-byte page programming function to make their write operations faster. Features  Single supply: 2.7 to 5.5 V  Access time:  85 ns (max)/100 ns (max) at 4.5 V  VCC < 5.5 V  120 ns (max) at 2.7 V  VCC  5.
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