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NP55N055SDG - MOS FIELD EFFECT TRANSISTOR

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Renesas

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NP55N055SDG MOS FIELD EFFECT TRANSISTOR by Renesas - Datasheet Preview — Datasheet preview – NP55N055SDG

Datasheet Details

Part number	NP55N055SDG
Manufacturer	Renesas
File Size	195.42 KB
Description	MOS FIELD EFFECT TRANSISTOR
Datasheet	NP55N055SDG Datasheet
Additional preview pages of the NP55N055SDG datasheet.

Product details

Description

The NP55N055SDG is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

Channel temperature 175 degree rating.
Super low on-state resistance RDS(on)1 = 9.5 mΩ MAX. (VGS = 10 V, ID = 28 A).
Low Ciss: Ciss = 3200 pF TYP.
Logic level drive type (TO-252).

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Published: Aug 18, 2015 |