NP55N04SLG - MOS FIELD EFFECT TRANSISTOR

Product Overview

Renesas

Part number	NP55N04SLG
Manufacturer	Renesas
File Size	242.99 KB
Description	MOS FIELD EFFECT TRANSISTOR
Datasheet	NP55N04SLG Datasheet
Additional preview pages of the NP55N04SLG datasheet.

The NP55N04SLG is N-channel MOS Field Effect Transistor designed for high current switching applications.

Channel temperature 175 degree rating.
Super low on-state resistance ⎯ RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 28 A) ⎯ RDS(on)2 = 8.5 mΩ MAX. (VGS = 5 V, ID = 28 A) ⎯ RDS(on)3 = 15 mΩ MAX. (VGS = 4.5 V, ID = 11 A).
Low input capacitance.
Gate to Source ESD protection diode built-in Ordering Information Part No. LEAD.

📁 Similar Datasheet

Other Datasheets by Renesas

Published: May 15, 2016 |