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RJK5030DPD Silicon N Channel MOS FET High Speed Power Switching

RJK5030DPD Description

Preliminary www.DataSheet4U.com Datasheet RJK5030DPD Silicon N Channel MOS FET High Speed Power Switching .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

RJK5030DPD Features

* Low on-state resistance RDS(on) = 1.3  typ. (at ID = 2 A, VGS = 10 V, Ta = 25C)
* High speed switching REJ03G1913-0100 Rev.1.00 Apr 12, 2010 Outline RENESAS Package code: PRSS0004ZG-A (Package name : MP-3A) 4 1. 2. 3. 4. Gate Drain Source Drain D G 12 3 S Absolute Maximum Ratings (

RJK5030DPD Applications

* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign law

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Silicon Channel MOS FET High Speed Power Switching Renesas Technology
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