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RJK5003DPD Silicon N Channel Power MOS FET

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www.DataSheet4U.com RJK5003DPD Silicon N Channel Power MOS FET High Speed Power Switching Use REJ03G0580-0200 Rev.2.00 Mar 14, 2006 .

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Applications

* Lighting ballast, SMPS, etc. Maximum Ratings (Tc = 25°C) Parameter Drain to source voltage Gate to source voltage Drain current Drain Peak current Avalanche current Channel dissipation Channel temperature Storage temperature Channel to case thermal impedance Note: Symbol VDSS VGSS ID ID (

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