Datasheet Details
- Part number
- RJK5003DPD
- Manufacturer
- Renesas ↗ Technology
- File Size
- 111.94 KB
- Datasheet
- RJK5003DPD_RenesasTechnology.pdf
- Description
- Silicon N Channel Power MOS FET
RJK5003DPD Description
www.DataSheet4U.com RJK5003DPD Silicon N Channel Power MOS FET High Speed Power Switching Use REJ03G0580-0200 Rev.2.00 Mar 14, 2006 .RJK5003DPD Applications
* Lighting ballast, SMPS, etc. Maximum Ratings (Tc = 25°C) Parameter Drain to source voltage Gate to source voltage Drain current Drain Peak current Avalanche current Channel dissipation Channel temperature Storage temperature Channel to case thermal impedance Note: Symbol VDSS VGSS ID ID (
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