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HAT1111C - Silicon P-Channel Power MOSFET

Renesas Technology

The HAT1111C by Renesas Technology is a Silicon P-Channel Power MOSFET. Below is the official datasheet preview.

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HAT1111C Silicon P-Channel Power MOSFET by Renesas Technology - Datasheet Preview — Official preview page of the HAT1111C Silicon P-Channel Power MOSFET datasheet (Renesas Technology).

Datasheet Details

Part number	HAT1111C
Manufacturer	Renesas Technology
File Size	181.90 KB
Description	Silicon P-Channel Power MOSFET
Datasheet	HAT1111C_RenesasTechnology.pdf
Additional preview pages of the HAT1111C datasheet.

HAT1111C Product details

Features

Low on-resistance RDS(on) = 245 mΩ typ. (at VGS =.
10 V) www. DataSheet4U. com.
Low drive current.
4.5 V gate drive devices.
High density mounting Outline.

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Published: Nov 20, 2008 |