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H7N0608FM - Silicon N-Channel MOSFET

Renesas Technology

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Datasheet Details

Part number	H7N0608FM
Manufacturer	Renesas ↗ Technology
File Size	141.64 KB
Description	Silicon N-Channel MOSFET
Datasheet	H7N0608FM_RenesasTechnology.pdf

H7N0608FM Product details

Features

Low on-resistance RDS(on) = 6.5 mΩ typ.
Low drive current.
4.5 V gate drive device can be driven from 5 V source Outline TO-220FM D G 1 2 S 1. Gate 2. Drain 3. Source 3 Rev.1.00, Dec.04.2003, page 1 of 9 H7N0608FM Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current www. DataSheet4U. com Symbol VDSS VGSS ID ID (pulse) IDR IAP Note3 Note1 Ratings 60 ±20 50 200 50 40 137 30 150.
55 to.

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Published: Nov 20, 2008 |