RM3075S8 N and P-Channel Enhancement Mode Power MOSFET

Rectron

Description

RM3075S8 N and P-Channel Enhancement Mode Power MOSFET .
The RM3075S8 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

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Datasheet Specifications

Part number: RM3075S8
Manufacturer: Rectron
File Size: 612.32 KB
Datasheet: RM3075S8-Rectron.pdf
Description: N and P-Channel Enhancement Mode Power MOSFET

Features

* N-Channel VDS = 30V,ID =6.8A RDS(ON) < 40m @ VGS=4.5V RDS(ON) < 27m @ VGS=10V P-Channel VDS = -30V,ID = -4.6A RDS(ON) < 103m @ VGS=-4.5V RDS(ON) < 64m @ VGS=-10V N-channel P-channel Schematic diagram 3075 High power and current handing capability Lead free product is acquired Surface mount pack

RM3075S8 Distributors

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RM3075S8 and P-Channel Enhancement Mode Power MOSFET Rectron

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