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RM30P30D3 - P-Channel Enhancement Mode Power MOSFET

Description

The RM30P30D3 uses advanced trench technology to provide excellent RDS(ON), low gate charge .

This device is suitable for use as a load switch or in PWM applications.

Features

  • ƽ VDS = -30V,ID = -30A RDS(ON) < 13mΩ @ VGS=-4.5V RDS(ON) < 10mΩ @ VGS=-10V ƽ High Power and current handing capability ƽ Lead free product is acquired ƽ Surface mount package.

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Datasheet Details

Part number RM30P30D3
Manufacturer Rectron
File Size 433.22 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet RM30P30D3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RM30P30D3 P-Channel Enhancement Mode Power MOSFET Description The RM30P30D3 uses advanced trench technology to provide excellent RDS(ON), low gate charge . This device is suitable for use as a load switch or in PWM applications. General Features ƽ VDS = -30V,ID = -30A RDS(ON) < 13mΩ @ VGS=-4.
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