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8205A - Dual N-Channel MOSFET

Description

The 8205Ais a dual N-channel MOS Field Effect Transistor which uses advanced trench technology to provide excellent RDS(on) , low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch .

Features

  • l VDS =20 V l ID =6A l Low on-state resistance Fast switching RDS(on) = 45mΩ (typ. )(VGS = 4.5V, ID = 2.0A) RDS(on) = 48mΩ (typ. )(VGS = 3.85V, ID = 2.0A) RDS(on) = 60mΩ (typ. )(VGS = 2.5V, ID = 2.0A) l Lead free product is acquired l Surface Mount Package.

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Datasheet Details

Part number 8205A
Manufacturer RZC Microelectronics
File Size 685.51 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet 8205A Datasheet
Additional preview pages of the 8205A datasheet.

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    8205A Dual N-Channel MOSFET . GENERAL DESCRIPTION The 8205Ais a dual N-channel MOS Field Effect Transistor which uses advanced trench technology to provide excellent RDS(on) , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch . FEATURES l VDS =20 V l ID =6A l Low on-state resistance Fast switching RDS(on) = 45mΩ (typ.)(VGS = 4.5V, ID = 2.0A) RDS(on) = 48mΩ (typ.)(VGS = 3.85V, ID = 2.0A) RDS(on) = 60mΩ (typ.)(VGS = 2.5V, ID = 2.
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