8205A - Dual N-Channel Enhancement Mode MOSFET

Key Features

20V 5A N-channel Trench Mosfet.
RDSON≤27mΩ @Vgs=4.5V, Id=5A.
RDSON≤36mΩ @Vgs=2.5V, Id=3A.
Low gate Charge.
Fast switching capability.
High reliability and rugged SYMBOL.

8205A dual n-channel enhancement mode mosfet by UMW - Datasheet Preview

Datasheet Details

Part number	8205A
Manufacturer	UMW
File Size	653.14 KB
Description	Dual N-Channel Enhancement Mode MOSFET
Datasheet	8205A Datasheet

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UMW R UMW 8205A Dual N-Channel Enhancement Mode MOSFET FEATURES ·20V 5A N-channel Trench Mosfet ·RDSON≤27mΩ @Vgs=4.5V, Id=5A ·RDSON≤36mΩ @Vgs=2.5V, Id=3A ·Low gate Charge ·Fast switching capability ·High reliability and rugged SYMBOL APPLIACTION ·Portable Equipment ·Battery Powered System ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current(Note1) Continuous Pulsed Power Dissipation (TA=25°C) (Note 2) TA=25°C TA=100°C Thermal Resistance-Junction to Ambient Maximum Junction Temperature Storage Temperature Range Note: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2% 2. Pulse width limited by TJ(MAX) Symbol VDSS VGSS ID IDM PD RθJA TJ TSTG Rating 20 ±12 5 20 0.83 0.