D50N06 50A 60V N-channel Enhancement Mode Power MOSFET

Description

50A 60V N-channel Enhancement Mode Power MOSFET D50N06 1 .
These N-channel Enhanced VDMOSFETs Used advanced trench technology design, provided excellent RDSON and low gate charge.

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Datasheet Specifications

Part number: D50N06
Manufacturer: ROUM
File Size: 743.55 KB
Datasheet: D50N06-ROUM.pdf
Description: 50A 60V N-channel Enhancement Mode Power MOSFET

Features

* Fast Switching
* Low ON Resistance(Rdson≤18mΩ)
* Low Gate Charge(Typical:17nC)
* Low Reverse Transfer Capacitances(Typical:150pF)
* 100% Single Pulse Avalanche Energy Test

Applications

* Power switching applications
* DC-DC Convertors
* UPS power supply
* Load switch 2 D VDSS = 60V RDS(on) （TYP)= 12mΩ ID = 50A 3S TO-252 4 Electrical Characteristics 4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted) PARAMETER SYMBOL Maximum Drian-Source DC Voltage Maxim

D50N06 Distributors

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D50N06 50A 60V N-channel Enhancement Mode Power MOSFET ROUM

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