20N60D, 20N60 Datasheet - ROUM

20N60D 20A 600V N-channel Enhancement Mode Power MOSFET

These silicon N-channel Enhanced VDMOSFETs are obtained by the self-aligned planar Technology which reduce the conduction loss,improve switching performance and enhance the avalanche energy.The package form is TO-220F. Which accords with the RoHS standard. VDSS = 600V RDS(on) （TYP)= 0.36Ω ID = 20A .

20N60D Features

* Fast Switching

* Low On Resistance(Rdson≤0.45Ω)

* Low Gate Charge(Typical:61nC)

* Low Reverse Transfer Capacitances(Typical:20pF)

* 100% Single Pulse Avalanche Energy Test

* 100% ΔVDS Test 3 Application

* Used in various power switching circuit for system miniaturizatio

20N60-ROUM.pdf

20N60D Datasheet Preview — This datasheet PDF includes multiple part numbers: 20N60D, 20N60. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

20N60D, 20N60

Manufacturer:

ROUM

File Size:

1.14 MB

Description:

20a 600v n-channel enhancement mode power mosfet.

Note:

This datasheet PDF includes multiple part numbers: 20N60D, 20N60.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

20N60 20A 600V N-channel Enhancement Mode Power MOSFET (ROUM)

20N60 IGBT (IXYS)

20N60 600V N-CHANNEL POWER MOSFET (UTC)

20N60 N-Channel MOSFET (VBsemi)

20N60 N-Channel MOSFET (ON Semiconductor)

20N60A IGBT (IXYS)

20N60A N-channel MOSFET (JieJie)

20N60A4D HGTG20N60A4D (Fairchild Semiconductor)

TAGS

20N60D 20N60 20A 600V N-channel Enhancement Mode Power MOSFET ROUM

20N60D Distributor