Datasheet Specifications
- Part number
- 20N60A4D
- Manufacturer
- Fairchild Semiconductor
- File Size
- 175.11 KB
- Datasheet
- 20N60A4D_FairchildSemiconductor.pdf
- Description
- HGTG20N60A4D
Description
HGTG20N60A4D Data Sheet February 2009 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60A4D is a MOS gated high voltag.
Features
* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49339. The diode used in20N60A4D Distributors
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