1) Power mold type (TO-252) 2) Cathode common dual type 3) High reliability 4) Low IR
12
1.6 1.6
TO-252
2.3 2.3
ROHM : TO-252 JEITA : SC-63
1 : Manufacture Date 2 : Serial number
lStructure
(2) Cathode
lConstruction Silicon epitaxial planar type
lTaping Dimensions (Unit : mm)
(1) Anode (3) Anode
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive Peak Reverse Voltage
VRM
Duty≦0.5
45 V
Reverse Voltage Average Forward Rectified Current
Non-r.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Schottky Barrier Diode
RBQ10BM45A
lApplication General rectification
lDimensions (Unit : mm)
Data Sheet
lLand size figure (Unit : mm)
6.0
3.0 2.0 6.0
lFeatures 1) Power mold type (TO-252) 2) Cathode common dual type 3) High reliability 4) Low IR
12
1.6 1.6
TO-252
2.3 2.3
ROHM : TO-252 JEITA : SC-63
1 : Manufacture Date 2 : Serial number
lStructure
(2) Cathode
lConstruction Silicon epitaxial planar type
lTaping Dimensions (Unit : mm)
(1) Anode (3) Anode
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive Peak Reverse Voltage
VRM
Duty≦0.