2SB1189 Datasheet - ROHM

2SB1189 Medium power transistor

2SB1189 Features

* 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SD1767 / 2SD1859.

* Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Collector-base voltage VCBO

* 80 Collector-emitter voltage VCEO

* 80 Emitter-base voltage VEBO

Datasheet Details

2SB1189

89.37 KB

Medium power transistor.

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2SB1189 Medium power transistor ROHM

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