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2SB1182 - Medium power Transistor

Rohm

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Datasheet Details

Part number	2SB1182
Manufacturer	ROHM
File Size	143.53 KB
Description	Medium power Transistor
Datasheet	2SB1182_Rohm.pdf

2SB1182 Product details

Features

Low VCE(sat). VCE(sat) = 0.5V (Typ. ) (IC/IB = 2A / 0.2A) 2) Complements 2SD1758 / 2SD1862.
Structure Epitaxial planar type PNP silicon transistor.
Dimensions (Unit : mm) 2SB1182 6.5±0.2 5.1+.
00..21 C0.5 2.3+.
00..21 0.5±0.1 2SB1240 6.8±0.2 2.5±0.2 4.4±0.2 1.0 0.9 5.5+.
00..31 1.5±0.3 0.9 1.5 2.5 9.5±0.5 0.75 0.9 0.65±0.1 2.3±0.2 2.3±0.2 0.55±0.1 1.0±0.2 (1) (2) (3) ROHM : CPT3 EIAJ : SC-63 (1) Base (2) Collector (3) Emitter 0.65Max. 14.5±0.5 0.

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Published: Mar 22, 2005 |