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V54C3256804VE - 64Mbit SDRAM

Download the V54C3256804VE datasheet PDF (V54C365164VE included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for 64mbit sdram.

Description

The V54C365(16/80/40)4VE is a four bank Synchronous DRAM organized as 4 banks x 1Mbit x 16, 4 banks x 2Mbit x 8, or 4 banks x 4Mbit x 4.

Features

  • 4 banks x 1Mbit x 16 organization 4 banks x 2Mbit x 8 organization 4 banks x 4Mbit x 4 organization High speed data transfer rates up to 166 MHz Full Synchronous Dynamic RAM, with all signals referenced to clock rising edge Single Pulsed RAS Interface Data Mask for Read/Write Control Four Banks controlled by BA0 & BA1 Programmable CAS Latency: 2, 3 Programmable Wrap Sequence: Sequential or Interleave Programmable Burst Length: 1,.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (V54C365164VE_ProMOSTechnologies.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number V54C3256804VE
Manufacturer ProMOS Technologies
File Size 813.43 KB
Description 64Mbit SDRAM
Datasheet download datasheet V54C3256804VE Datasheet
Other Datasheets by ProMOS Technologies

Full PDF Text Transcription

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w w w . D a t a S h e e t 4 U . c o m V54C365(16/80/40)4VE 64Mbit SDRAM 3.3 VOLT, TSOP II / FBGA 4M X 16, 8M X 8, 16M X 4 6 System Frequency (fCK) Clock Cycle Time (tCK3) Clock Access Time (tAC3) CAS Latency = 3 Clock Access Time (tAC2) CAS Latency = 2 166 MHz 6 ns 5.4 ns 5.4 ns 7PC 143 MHz 7 ns 5.4 ns 5.4 ns 7 143 MHz 7 ns 5.
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