PNM3FD20V1ELN Datasheet - Prisemi

PNM3FD20V1ELN - N-Channel MOSFET

The PNM3FD20V1ELN uses split gate trench technology to provide excellent RDS(ON) land ow gate charge. This device is suitable for power management and high efficiency applications at high switching frequencies applications. VDS(V) 20 ESD MOSFET Product Summary RDS(on)(mΩ)(Typ) 145 @ VGS = 4.5V 17.

PNM3FD20V1ELN-Prisemi.pdf

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Datasheet Details

Part number:

PNM3FD20V1ELN

Manufacturer:

Prisemi

File Size:

387.62 KB

Description:

N-channel mosfet.

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PNM3FD20V1ELN N-Channel MOSFET Prisemi