QIC6508001 Dual Common Emitter HV IGBT

Powerex Power Semiconductors

Description

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QIC6508001 Preliminary Dual Common Emitter HVIGBT Module .
Powerex HVIGBTs feature highly insulating housings that offer enhanced protection by means of greater creepage and strike clearance distance for many.

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Datasheet Specifications

Part number: QIC6508001
Manufacturer: Powerex Power Semiconductors
File Size: 336.63 KB
Datasheet: QIC6508001-PowerexPowerSemiconductors.pdf
Description: Dual Common Emitter HV IGBT

Features

*  -40 to 150°C Extended Temperature Range  100% Dynamic Tested  100% Partial Discharge Tested  Advanced Mitsubishi R-Series Chip Technology  Aluminum Nitride (AlN) Ceramic Substrate for Low Thermal Impedance  Complementary Line-up in Expanding Current Ranges to Mitsubishi HV

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QIC6508001 Dual Common Emitter IGBT Powerex Power Semiconductors

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