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A3S12D30ETP 512Mb DDR SDRAM

A3S12D30ETP Description

512Mb DDR SDRAM Specification A3S12D30ETP A3S12D40ETP Powerchip Semiconductor Corp.No.12 Li-Hsin Rd.1,Science-based Industrial Park ,Hsin-Chu Taiwan.
A3S12D30ETP is a 4-bank x 16,777,216-word x 8-bit, A3S12D40ETP is a 4-bank x 8,388,608-word x 16-bit, double data rate synchronous DRAM, with SSTL_2 i.

A3S12D30ETP Features

* - Vdd=Vddq=2.5V+0.2V (for speed grade -6, 7.5) - Vdd=Vddq=2.6V+0.1V (for speed grade -5) - Double data rate architecture; two data transfers per clock cycle - Bidirectional, data strobe (DQS) is transmitted/received with data - Differential clock inputs (CLK and /CLK) - DLL aligns DQ and DQS transit

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Datasheet Details

Part number
A3S12D30ETP
Manufacturer
Powerchip
File Size
2.10 MB
Datasheet
A3S12D30ETP_Powerchip.pdf
Description
512Mb DDR SDRAM

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512Mb DDR SDRAM Powerchip
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