Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
Features
- ES : 1 DIME NSIO NING & TO LERAN CING PE R AN SI Y 14.5M, 1982. 2 CO NTRO LLING DIMENS IO N : IN CH . 3 CO NF ORM S T O JEDE C O UTLINE T O-247-A C. 2 .4 0 (.09 4 ) 2 .0 0 (.07 9 ) 2X 5 .45 (.2 1 5) 2X
1 .4 0 (.0 56 ) 3 X 1 .0 0 (.0 39 ) 0 .25 (.0 10 ) M 3 .4 0 (.1 3 3 ) 3 .0 0 (.1 1 8 ) C A S
0 .8 0 (. 03 1 ) 3 X 0 .4 0 (. 01 6 ) 2.6 0 (.10 2 ) 2.2 0 (.08 7 )
Part Marking Information
TO-247AC E X AM PL E : T H IS I S A N IR F1 010 E XAM P LE : H T HA ISS S ISE MB A N LY IR FP E3 0 W IT IT.
IRFP054N_PowerMOSFET.pdf
