Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
Features
- 7-A C. 2 .4 0 (.09 4 ) 2 .0 0 (.07 9 ) 2X 5 .45 (.2 1 5) 2X
1 .4 0 (.0 56 ) 3 X 1 .0 0 (.0 39 ) 0 .25 (.0 10 ) M 3 .4 0 (.1 3 3 ) 3 .0 0 (.1 1 8 ) C A S
0 .8 0 (. 03 1 ) 3 X 0 .4 0 (. 01 6 ) 2.6 0 (.10 2 ) 2.2 0 (.08 7 )
Part Marking Information
TO-247AC E X AM PLE : T HI S IS A N IRF 1010 E XAM P L E IT : H T HA ISS S ISE MB AN LY IR F PE 30 W IT H AS SE M BL Y LO T W CO DE 9B 1M
LOT C ODE 3A 1Q
A
A
IN TE R NA T ION A L IN TE R N A TIO N A L R EC T IF IER R E C T IF IE R LO GO LOG O A SM.
IRFP048N_PowerMOSFET.pdf
