PMEW2520 Datasheet (Potens semiconductor)

PMEW2520, N-Channel MOSFETs

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Thes

PMEW2520 Features

* 20V,6.3A, RDS(ON) 20mΩ@VGS = 4.5V

* G-S ESD Diode Embedded

* Improved dv/dt capability

* Fast switching

* Green Device Available Applications

* Notebook

* Load Switch

* LED applications Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM P