PJX30N65T - N-Channel MOSFETS

Potens semiconductor

Datasheet Details

Part number	PJX30N65T
Manufacturer	Potens semiconductor
File Size	803.60 KB
Description	N-Channel MOSFETS
Datasheet	PJX30N65T-Potenssemiconductor.pdf

These N-Channel enhancement mode power field effect transistors are using Super Junction technology.

30A,650V, RDS(ON) =0.14Ω@VGS = 10V.
Improved dv/dt capability.
Fast switching.
100% EAS Guaranteed.
Green Device Available App.
licHaigthioenffiscient switched mode power supplies.
LED Lighting.
Adapter/charger G DS G S Absolute Maximum Ratings (Tc=25℃ unless otherwise noted) Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current.
Continuous (TC=25℃) Drain Current.
Continuous (TC=1.

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Published: Aug 23, 2018 |