Datasheet4U.com

PJX17N80T - N-Channel MOSFETS

Potens semiconductor

📥 Download Datasheet

PJX17N80T Datasheet Preview — Preview of PJX17N80T PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	PJX17N80T
Manufacturer	Potens semiconductor
File Size	821.54 KB
Description	N-Channel MOSFETS
Datasheet	PJX17N80T-Potenssemiconductor.pdf

PJX17N80T Product details

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

Features

800V,17A, RDS(ON) =0.35Ω@VGS = 10V.
Improved dv/dt capability.
Fast switching.
100% EAS Guaranteed.
Green Device Available.

📁 PJX17N80T Similar Datasheet

PJX138K - N-Channel Enhancement Mode MOSFET (Pan Jit International)
PJX138L - N-Channel Enhancement Mode MOSFET (Pan Jit International)
PJX8603 - Complementary Enhancement Mode MOSFET (Pan Jit International)
PJX8802 - 20V N-CHANNEL MOSFET (Pan Jit International)
PJX8803 - P-Channel Enhancement Mode MOSFET (Pan Jit International)
PJX8804 - N-Channel Enhancement Mode MOSFET (Pan Jit International)
PJX8805 - P-Channel Enhancement Mode MOSFET (Pan Jit International)
PJX8806 - 20V N-Channel MOSFET (PanJit International)

Other Datasheets by Potens semiconductor

PJX20N60D - N-Channel MOSFETS
PJX30N65T - N-Channel MOSFETS
PJX53N65D - N-Channel MOSFETS
PJX60N60T - N-Channel MOSFETS

Published: Aug 23, 2018 |