PDQ2116 - N+P Channel MOSFETs

Potens semiconductor

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Datasheet Details

Part number	PDQ2116
Manufacturer	Potens semiconductor
File Size	898.12 KB
Description	N+P Channel MOSFETs
Datasheet	PDQ2116-Potenssemiconductor.pdf

PDQ2116 Product details

Description

These N+P dual Channel enhancement mode power BVDSS RDSON ID field effect transistors are using trench DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, 20V -20V 40m 100m 3.8A -2.5A provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.These devices are well suited for high efficiency fast switching applications.SOT23-6 Dual Pin Configuration D1 D1 S1 D2 G1 G G2 D2 Featu

Features

Fast switching.
Green Device Available.
Suit for 1.8V Gate Drive.

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Published: Aug 18, 2018 |