PDQ2116 Datasheet (Potens semiconductor)

PDQ2116, N+P Channel MOSFETs

These N+P dual Channel enhancement mode power BVDSS RDSON ID field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, 20V -20V 40m 100m 3.8A -2.5A provide superior switching performance, and withstand h

PDQ2116 Features

* Fast switching

* Green Device Available

* Suit for 1.8V Gate Drive Applications Applications

* Notebook

* Load Switch

* Networking G2

* Hand-held Instruments G1 S2 S1 S2 Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parame