PDQ0854-R Datasheet (Potens semiconductor)

PDQ0854-R, Dual N-Channel MOSFETs

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Thes

PDQ0854-R Features

* 100V,1.5A, RDS(ON) =330mΩ @VGS = 10V

* Improved dv/dt capability

* Fast switching

* Green Device Available SOT23-6-R Pin Configuration D1 D1 S2 D2 G1 G2 G2 G1 S1 S1 Applications D2

* Networking

* Load Switch

* LED applications S2 Absolute Maximum Ratings Tc=25℃ u