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PDN6912S - N-Channel MOSFETs

PDN6912S Description

60V N-Channel MOSFETs PDN6912S General .
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

PDN6912S Features

* 60V,3.2A, RDS(ON) =75mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed

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Datasheet Details

Part number
PDN6912S
Manufacturer
Potens semiconductor
File Size
723.66 KB
Datasheet
PDN6912S-Potenssemiconductor.pdf
Description
N-Channel MOSFETs

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N-Channel MOSFETs Potens semiconductor
Potens semiconductor PDN6912S-like datasheet