PDN6911S Datasheet (Potens semiconductor)

PDN6911S, P-Channel MOSFET

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Thes

PDN6911S Features

* -60V,-2A, RDS(ON) =190mΩ@VGS = -10V

* Improved dv/dt capability

* Fast switching

* Green Device Available Applications

* Motor Drive

* Power Tools

* LED Lighting Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-