PDC7966X Datasheet (Potens semiconductor)

PDC7966X, N-Channel MOSFETs

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Thes

PDC7966X Features

* 75V,75A, RDS(ON) =12mΩ@VGS = 10V

* Improved dv/dt capability

* Fast switching

* Green Device Available Applications

* PowerTools

* Load Switch

* LED applications

* Motor Drive Applications Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID I