PDC0810T Datasheet - Potens semiconductor

PDC0810T Dual N-Channel MOSFETs

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

PDC0810T Features

* 100V,10A, RDS(ON) =185mΩ@VGS = 10V

* Improved dv/dt capability

* Fast switching

* 100% EAS Guaranteed

* Green Device Available Applications

* Networking

* Load Switch

* LED applications Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM P

PDC0810T Datasheet (927.86 KB)

PDC0810T Datasheet Preview — Preview of PDC0810T PDF

Datasheet Details

Part number:

PDC0810T

Manufacturer:

Potens semiconductor

File Size:

927.86 KB

Description:

Dual n-channel mosfets.

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PDC0810T Dual N-Channel MOSFETs Potens semiconductor

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