PDC3806T Datasheet (Potens semiconductor)

PDC3806T, Dual N-Channel MOSFETs

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Thes

PDC3806T Features

* 30V,40A, RDS(ON) =6.5mΩ@VGS = 10V

* Improved dv/dt capability

* Fast switching

* 100% EAS Guaranteed

* Green Device Available Applications

* MB / VGA / Vcore

* POL Applications

* SMPS 2nd SR

* USB Type C Absolute Maximum Ratings Tc=25℃ unless otherwise noted