Datasheet4U Logo Datasheet4U.com

PDC3810V - Dual N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 30V,35A, RDS(ON) =13mΩ @VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.

📥 Download Datasheet

Datasheet Details

Part number PDC3810V
Manufacturer Potens semiconductor
File Size 682.07 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet PDC3810V Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PDC-10-1+ Directional Coupler Mini-Circuits
PDC0302 SMD POWER INDUCTORS Superworld Electronics
PDC0403 SMD POWER INDUCTORS Superworld Electronics
PDC0502 SMD POWER INDUCTORS Superworld Electronics
PDC0504 SMD POWER INDUCTORS Superworld Electronics

Other Datasheets by Potens semiconductor

Part Number Description
PDC3810H N-Channel MOSFETs
PDC3812V N-Channel MOSFET
PDC3801R N-Channel MOSFETs
PDC3803R N-Channel MOSFETs
PDC3806T Dual N-Channel MOSFETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
30V Dual N-Channel MOSFETs PDC3810V General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
Published: |