Part number:
P123
Manufacturer:
Polyfet RF Devices
File Size:
38.89 KB
Description:
Patented gold metallized silicon gate enhancement mode rf power vdmos transistor.
Datasheet Details
P123 Features
* gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM P123 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 2 Watts Single Ended Package Style SO8 HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM R
Datasheet Details
P123
Polyfet RF Devices
38.89 KB
Patented gold metallized silicon gate enhancement mode rf power vdmos transistor.
📁 Related Datasheet
P120 Rotary Potentiometer (TT)
P1200A Silicon Rectifier Diodes (Diotec)
P1200A Standard silicon rectifier diodes (Semikron)
P1200B Silicon Rectifier Diodes (Diotec)
P1200B Standard silicon rectifier diodes (Semikron)
P1200D Silicon Rectifier Diodes (Diotec)
P1200D Standard silicon rectifier diodes (Semikron)
P1200G Silicon Rectifier Diodes (Diotec)
P123 Distributor