Datasheet Specifications
- Part number
- P121
- Manufacturer
- Polyfet RF Devices
- File Size
- 32.87 KB
- Datasheet
- P121_PolyfetRFDevices.pdf
- Description
- PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Description
polyfet rf devices P121 General .
Features
* low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 1.0 Watts Single Ended Package Style SO8 HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTEP121 Distributors
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