L125 SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

Polyfet RF Devices

L125 Description

polyfet rf devices L125 General .
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

L125 Features

* low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 15.0 Watts Single Ended Package Style SO8 -1 HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T

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Datasheet Details

Part number: L125
Manufacturer: Polyfet RF Devices
File Size: 38.43 KB
Datasheet: L125_PolyfetRFDevices.pdf
Description: SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

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SILICON GATE ENHANCEMENT MODE POWER LDMOS TRANSISTOR Polyfet RF Devices

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