Datasheet Specifications
- Part number
- L125
- Manufacturer
- Polyfet RF Devices
- File Size
- 38.43 KB
- Datasheet
- L125_PolyfetRFDevices.pdf
- Description
- SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
Description
polyfet rf devices L125 General .
Features
* low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 15.0 Watts Single Ended Package Style SO8 -1 HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( TL125 Distributors
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