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F1081 - RF POWER VDMOS TRANSISTOR

Polyfet RF Devices

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Datasheet Details

Part number	F1081
Manufacturer	Polyfet RF Devices
File Size	40.28 KB
Description	RF POWER VDMOS TRANSISTOR
Datasheet	F1081_PolyfetRFDevices.pdf

F1081 Product details

Description

Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

Features

gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance Total Device Dissipation 350 Watts Junction to Case Thermal Resistance 0.5 o C/W Maximum Junction Temperature 200 o C Storage Temperature F1081.

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Other Datasheets by Polyfet RF Devices

F1001 - RF POWER VDMOS TRANSISTOR
F1001C - RF POWER VDMOS TRANSISTOR
F1002 - RF POWER VDMOS TRANSISTOR
F1003 - RF POWER VDMOS TRANSISTOR
F1004 - RF POWER VDMOS TRANSISTOR
F1005 - RF POWER VDMOS TRANSISTOR

Published: Mar 30, 2005 |