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F1001C Datasheet - Polyfet RF Devices

F1001C RF POWER VDMOS TRANSISTOR

F1001C Features

* gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance F1001C PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 20 Watts Single Ended Package Style AC HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM RA

F1001C_PolyfetRFDevices.pdf

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Datasheet Details

Part number:

F1001C

Manufacturer:

Polyfet RF Devices

File Size:

33.80 KB

Description:

Rf power vdmos transistor.

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F1001C F1001C POWER VDMOS TRANSISTOR Polyfet RF Devices

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