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F1027 - RF POWER VDMOS TRANSISTOR

Polyfet RF Devices

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Datasheet Details

Part number	F1027
Manufacturer	Polyfet RF Devices
File Size	40.12 KB
Description	RF POWER VDMOS TRANSISTOR
Datasheet	F1027_PolyfetRFDevices.pdf

F1027 Product details

Description

Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

Features

gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance Total Device Dissipation 440 Watts Junction to Case Thermal Resistance 0.4 o C/W Maximum Junction Temperature 200 o C Storage Temperature F1027.

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Other Datasheets by Polyfet RF Devices

F1020 - RF POWER VDMOS TRANSISTOR
F1021 - RF POWER VDMOS TRANSISTOR
F1022 - RF POWER VDMOS TRANSISTOR
F1001 - RF POWER VDMOS TRANSISTOR
F1001C - RF POWER VDMOS TRANSISTOR
F1002 - RF POWER VDMOS TRANSISTOR

Published: Mar 30, 2005 |