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PJM250N40TO - N- Enhancement Mode Field Effect Transistor

PJM250N40TO Description

PJM250N40TO N- Enhancement Mode Field Effect Transistor .

PJM250N40TO Features

* High density cell design for ultra low RDS(on)
* Low RDS(ON) and Gate Charge

PJM250N40TO Applications

* Power switching application
* Hard switched and high frequency circuits
* Uninterruptible power supply TO-220 1 2 3 Schematic Diagram Drain 2 1 Gate 3 Source Absolute Maximum Ratings Ratings at TC =25℃ unless otherwise specified. Parameter Drain-Source Voltage Gate-Source Voltage

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Datasheet Details

Part number
PJM250N40TO
Manufacturer
Ping Jing
File Size
651.84 KB
Datasheet
PJM250N40TO-PingJing.pdf
Description
N- Enhancement Mode Field Effect Transistor

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