MA3Z551 Datasheet (Panasonic) - Silicon epitaxial planar type

MA3Z551, Silicon epitaxial planar type

PIN Diodes MA3Z551 Silicon epitaxial planar type Unit : mm For high-frequency variable resistor attenuator 2.1 ± 0.1 0.425 1.25 ± 0.1 0.425 Small diode capacitance CD Large variable range of forward dynamic resistance rf Mini type package, allowing downsizing of equipment and automatic insertion through the taping package and magazine package 0.65 2.0 ± 0.2 1.3 ± 0.1 1 0.65 3 2 0.2 0.9 ± 0.1 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage

MA3Z551 Features

* 1 MA3Z551 IF  V F 25°C PIN Diodes CD  VR f = 1 MHz Ta = 25°C 120 10 IR  Ta 1 000 VR = 40 V 100 5 Diode capacitance CD (pF) Forward current IF (mA) 100 80 Ta = 60°C 3 2 Reverse current IR (nA) 0 4 8 12 16 20 24 28 32 36 40 10 60 1 1 40 0.5 0.3 0.2 20

* 40°C 0 0 0.2 0.