MA3Z080E Datasheet (Panasonic) - Silicon epitaxial planar type

MA3Z080E, Silicon epitaxial planar type

Band Switching Diodes MA3Z080D, MA3Z080E Silicon epitaxial planar type Unit : mm For band switching 2.1 ± 0.1 0.425 1.25 ± 0.1 0.425 + 0.1 Low forward dynamic resistance rf Less voltage dependence of diode capacitance CD S-mini type package containing two elements, allowing downsizing of equipment and automatic insertion through the taping package 2.0 ± 0.2 1.3 ± 0.1 0.65 0.65 1 3 2 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Forward cu

MA3Z080E Features

* 1 MA3Z080D, MA3Z080E IF  V F 1 000 Ta = 25°C 10 Band Switching Diodes CD  VR f = 1 MHz Ta = 25°C IR  T a 100 VR = 33 V 5 3 2 10 1 Reverse current IR (nA) 0 4 8 12 16 20 24 28 32 36 40 100 Diode capacitance CD (pF) Forward current IF (mA) 10 1 0.5 0.3 0.2 1 0.1 0.1 0.1 0 0.2 0