MA3S795E Datasheet - Panasonic

MA3S795E, Silicon epitaxial planar type

Schottky Barrier Diodes (SBD) MA3S795E Silicon epitaxial planar type Unit : mm 0.28 ± 0.05 For switching circuits 1.60 * 0.03 0.80 0.80 0.51

Features

* 1 3 2 0.28 ± 0.05 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) For switching circuits Peak forward current Forward current (DC) Single Double
* Single Double
* Tj Tstg IF Symbol VR VRM IFM Rating 30 30 150 110 30 20 125
* 55 to +125 °C °C mA Unit V V mA 0.60

MA3S795E_PanasonicSemiconductor.pdf