MA3S132A - Silicon epitaxial planar type Switching Diodes
Panasonic
Features
1
3
2
0.28 ± 0.05
1
MA3S132A
IF V F
103 105 Ta = 150°C 102 104
Switching Diodes
IR V R
1.6 1.4
VF Ta
Forward current IF (mA)
Reverse current IR (nA)
Forward voltage VF (V)
1.2 1.0 IF = 100 mA 0.8 0.6 0.4 0.2
10
103
100°C
1
Ta = 150°C 100°C 25°C.
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Switching Diodes
MA3S132A
Silicon epitaxial planar type
Unit : mm
0.28 ± 0.05
For switching circuits
1.60 − 0.03 0.80 0.80 0.51 0.51
1.60 ± 0.1 0.80 0.80 ± 0.05
Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Note) * : t = 1 s
Symbol VR VRM IF IFM IFSM Tj Tstg
Rating 80 80 100 225 500 150 −55 to +150
Unit V V mA mA mA °C °C
0.60 − 0.03
0.44
0.44
+ 0.05
0.88 − 0.
MA3S132A Datasheet
