20.0±0.5
Unit: mm
φ 3.3±0.2 5.0±0.3
3.0
3.0
2.0 4.0
10.0 6.0
q High-speed switching
q Wide area of safe operation (ASO) with high breakdown voltage
q Satisfactory linearity of foward current transfer ratio hFE
26.0±0.5
1.5
/ s Absolute Maximum Ratings (TC=25˚C)
2.0±0.3
1.5
Parameter
Symbol
Ratings
Unit
e e) Collector to base voltage
VCBO
20.0±0.5 2.5
Solder Dip
1.5
2.0
1200
V
c typ Collector to emitter voltage VCEO
800
V
n d stage. tinued Emitter to base voltage
VEBO.
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Power Transistors
2SC3738
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching For horizontal deflection output
s Features
20.0±0.5
Unit: mm
φ 3.3±0.2 5.0±0.3
3.0
3.0
2.0 4.0
10.0 6.0
q High-speed switching
q Wide area of safe operation (ASO) with high breakdown voltage
q Satisfactory linearity of foward current transfer ratio hFE
26.0±0.5
1.5
/ s Absolute Maximum Ratings (TC=25˚C)
2.0±0.3
1.5
Parameter
Symbol
Ratings
Unit
e e) Collector to base voltage
VCBO
20.0±0.5 2.5
Solder Dip
1.5
2.0
1200
V
c typ Collector to emitter voltage VCEO
800
V
n d stage.
C3738 Datasheet
